Optet Technology Launches 200G PD Back-illuminated Optical Chips for Efficient AI Computing Network Interconnection

发表时间:2025-08-06 浏览次数:5 版权所有,未经许可严禁转载.

Abstract

Optet Technology launches a new generation of back-illuminated 200G PIN Photodetector (PD) chips. Boasting key performance parameters including a bandwidth of 52GHz and a responsivity of 0.7A/W, the products meet the stringent requirements of the AI exascale computing era for high-speed, low-noise, and low-power photoelectric conversion devices.


ICC News, August 5thShaoxing, Zhejiang, China – High-speed optical chip provider Zhejiang Optet Technology Co., Ltd. (Optet Technology for short) has unveiled a new portfolio of back-illuminated 200G PIN Photodetector (PD) chips, including single-channel and four-channel array variants. In the AI-driven exascale computing era, data centers, cloud networks, and Co-packaged Optics (CPO) architectures are advancing into the 800G/1.6T high-speed interconnection phase at an unprecedented pace. The new 200G PD optical chips from Optet Technology feature a bandwidth of up to 52GHz, a responsivity of 0.7 A/W, and a dark current of 0.35nA. They can deliver exceptional performance for high-speed optical modules and CPO platforms, meeting the stringent demands of the AI exascale computing era for high-speed, low-noise, and low-power photoelectric conversion devices.


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200G 光电探测器(PD)



Core Advantages – At a Glance

Ultra-Wide Bandwidth, Next-Generation Leading PerformanceFeaturing a bandwidth of up to 52 GHz at -2V, it perfectly adapts to the PAM4 modulation format and covers 800G/1.6T optical communication systems.

High Responsivity, Superior Light DetectionWith a responsivity of up to 0.7 A/W at the 1310 nm communication band, it effectively enhances receiving sensitivity and enables low-power reception.

Extremely Low Dark Current, Lower NoiseOptimized semiconductor material and structural design result in a dark current as low as 0.35 nA, significantly improving system signal-to-noise ratio (SNR) and reducing bit error rate (BER).

Low Capacitance Design, Purified Signal TransmissionThe device has a capacitance of only 27 fF, suppressing bandwidth roll-off and reflection loss to ensure complete transmission of high-frequency signals.


Wide Range of Application Scenarios

Receive end of 800G/1.6T optical modules (e.g., DR4, FR4)

Interconnection of AI clusters and computing networks (CPO architecture)

Short-reach interconnection in data centers and backplane optical communications

High-speed photonic integrated circuit (PIC) platforms

Next-generation optical interconnection and telecommunication reception systems


Quick Look at Technical Parameters


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Supports multiple packaging options: bare die, COB, TO, and custom versions for CPO, meeting the integration requirements of different platforms.


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High-Speed, Reliable, Efficient

According to LightCounting's forecasts, the wave of AI development from 2023 to 2025 has spurred a surge in demand for optical interconnections, and this growth trajectory will continue through 2030. Co-packaged Optics (CPO) will become the preferred solution for AI expansion networks due to its high bandwidth density and reliability. The AI-related optical device market will grow at an annual rate of 30-35% between 2025 and 2026. Optet Technology's 200G PIN photodetector combines high-speed bandwidth, high sensitivity and ultra-low noise, making it a core component in next-generation high-speed optical communication systems. Whether for the future-oriented CPO (Co-packaged Optics) or the speed enhancement of pluggable optical modules, it leverages its exceptional performance to help build more efficient and stable interconnection architectures for optical networks in AI intelligent computing centers.