InGaAs ∅230 μm QAPD

InGaAs Φ230 μm QAPD.jpg


Product Features:

It is featuring short response time, low dark current, low crosstalk and four- quadrant APD with  25μm spacing. PN  junction and multiplication layer are all below the surface of the device during reliability design, which can effectively suppress the leakage current on the device surface and improve the reliability of the device.

Applications:

It can be used in target positioning, photoelectric tracking, precise tracking and detection of targets with weak signals, etc.