序号 P/N 产品名称 产品简介 发布时间
1 P/N:GTBAPDA12V1 InGaAs Bottom-illuminated 25G APD Chip(∅12 μm) InGaAs Bottom-illuminated 25G APD Chip(Φ12 μm)Product Features:The active diameter is 12μm, with an integrated lens on the back, featuring high multiplication, low capacitance, low temperature coefficient, GS structure, opposite electrodes.Applications:It can be used in 25G PON, 5G Wireless and 100G ER4. 2023-03-14
2 P/N:GTAPD36V1 InGaAs 10G APD (∅36 μm) InGaAs 10G APD (∅36 μm)Product Features:The active diameter is 36μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.Applications:It can be used in 10G PON(XGS OLT/10G EPON OLT)Class C+. 2023-03-14
3 P/N:GT10GCSAPD50V2_D InGaAs 10G APD (∅50 μm) InGaAs 10G APD (∅50 μm)Product Features:The active area is round with diameter of 50μm, featuring high reponsivity, low dark current and gold-coated ground  surface at the bottom side of chip.Applications:It can be used in 10G PON ONU. 2023-03-14
4 P/N:GTAPD50V1 InGaAs 2.5G APD(∅50 μm) InGaAs 2.5G APD(∅50 μm)Product Features:The active diameter is 50μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.Applications:It can be used in GPON ONU and 2.5G optical modules. 2023-03-14
5 P/N:GTBPD12V1 InGaAs 200Gbps PIN PD Chip(∅12um) InGaAs 200Gbps PIN PD Chip(∅12um)Product Features:The active diameter is 12μm, with an integrated lens on the back, featuring high reponsivity, low dark current, GSG   structure, coplanar electrodes.Applications:It can be used in 800G and 1.6T Ethernet. 2023-03-14
6 P/N:GTBPD12V1_750_1×4 lnGaAs 4x200Gbps PIN PD Array(pitch=750um) (∅12um) lnGaAs 4x200Gbps PIN PD Array(pitch=750um) (∅12um)Product Features:The active diameter is 12μm, with an integrated lens on the back, featuring high reponsivity, low dark current, GSG  structure, coplanar electrodes and pitch size is 750um.Applications:It can be used in 800G and 1.6T Ethernet. 2023-03-14
7 P/N:GTPD20V1 InGaAs 56Gbps PIN PD Chip (∅20um) InGaAs 56Gbps PIN PD Chip (∅20um)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure and coplanar electrodes.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
8 P/N:GTPD20AV1_250_1×4 InGaAs 4x56Gbps PIN PD Array(pitch=250um) (∅20um) InGaAs 4x56Gbps PIN PD Array(pitch=250um) (∅20um)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 250um.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
<< 12345 >>