序号 P/N 产品名称 产品简介 发布时间
1 P/N:GTPD20AV1_500_1×4 InGaAs 4x56Gbps PIN PD Array(pitch=500um) (∅20um) InGaAs 4x56Gbps PIN PD Array(pitch=500um) (∅20um)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 500um.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
2 P/N:GTPD20AV1_750_1×4 InGaAs 4x56Gbps PIN PD Array(pitch=750um) (∅20um) InGaAs 4x56Gbps PIN PD Array(pitch=750um) (∅20um)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 750um.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
3 P/N:GTPD16V1 InGaAs 56G PIN PD (∅16μm) InGaAs 56G PIN PD (∅16μm)Product Features:The active diameter is 16μm, featuring high reponsivity, low dark current, GSG structure and coplanar electrodes.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
4 GTPD16AV1_250_1×4 InGaAs 4x56Gbps PIN PD Array(pitch=250um) (∅16um) InGaAs 4x56Gbps PIN PD Array(pitch=250um) (∅16um)Product Features:The active diameter is 16μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 250um.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
5 P/N:GTPD16AV1_500_1×4 InGaAs 4x56Gbps PIN PD Array(pitch=500um) (∅16um) InGaAs 4x56Gbps PIN PD Array(pitch=500um) (∅16um)Product Features:The active diameter is 16μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 500um.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
6 P/N:GTPD16AV1_750_1×4 InGaAs 4x56Gbps PIN PD Array(pitch=750um) (∅16um) InGaAs 4x56Gbps PIN PD Array(pitch=750um) (∅16um)Product Features:The active diameter is 16μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 750um.Applications:It can be used in Data Center, 200G LR4 and 400G LR4. 2023-03-14
7 P/N: GTPD20G1 InGaAs 25G PIN PD (∅25μm) InGaAs 25G PIN PD (∅25μm)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure and coplanar electrodes.Applications:It can be used in 5G Wireless, 100G CWDM4 and 100G LR4. 2023-03-14
8 P/N:GTPD20GA1_250 InGaAs 4x25G PIN PD Array(pitch=250um) (∅20μm) InGaAs 4x25G PIN PD Array(pitch=250um) (∅20μm)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 250um.Applications:It can be used in 100G CWDM4、100G LR4. 2023-03-14
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