| 序号 | P/N | 产品名称 | 产品简介 | 发布时间 |
|---|---|---|---|---|
| 1 | P/N:GTBAPDA12V2 | InGaAs Bottom-illuminated 25G APD Chip(∅12 μm) | InGaAs Bottom-illuminated 25G APD Chip(Φ12 μm)Product Features:The active diameter is 12μm, featuring high multiplication, low dark current, GS structure and opposite electrodes.Applications:It can be used in 25G PON、 100G ER4. | 2023-03-14 |
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