序号 P/N 产品名称 产品简介 发布时间
1 P/N:GTPD20GA1_750 InGaAs 4x25G PIN PD Array(pitch=750um) (∅20μm) InGaAs 4x25G PIN PD Array(pitch=750um) (∅20μm)Product Features:The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and  pitch size is 750um.Applications:It can be used in 5G Wireless, 100G CWDM4 and 100G LR4. 2023-03-14
2 P/N:GTPD50V4 InGaAs 10G PIN PD (∅50μm) InGaAs 10G PIN PD (∅50μm)Product Features:The active diameter is 50μm, featuring high reponsivity, low dark current, GS structure and coplanar electrodes.Applications:It can be used in 10G data transmission and wireless communication. 2023-03-14
3 P/N:GTANPD60V1 2.5G Analog PIN PD (∅60 μm) 2.5G Analog PIN PD (∅60 μm)Product Features:The active diameter is 60μm, featuring high reponsivity, low dark current, low second and third order intermodulation distortion and gold-coated ground surface at the bottom side of chip.Applications:It can be used in CATV analog optical receiver and analog video. 2023-03-14
4 P/N:GTANPD80V2 2.5G Analog PIN PD (∅80 μm) 2.5G Analog PIN PD (∅80 μm)Product Features:The active diameter is 80μm, featuring high reponsivity, low dark current, low second and third order intermodulation distortion and gold-coated ground surface at the bottom side of chip.Applications:It can be used in CATV analog optical receiver and analog video. 2023-03-14
5 P/N:GTPD80V2 2.5G PIN PD (∅80 μm) 2.5G PIN PD (∅80 μm)Product Features:The active diameter is 80μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.Applications:It can be used in low-speed optical modules and FTTR. 2023-03-14
6 P/N: GTPD32AV1_250_1x4 850nm/910nm InGaAs PD Array (100Gbps PAM4) 850nm/910nm InGaAs PD Array (100Gbps PAM4)Product Features:The active diameter is 32μm, featuring high reponsivity(850nm/910nm/1310nm), low dark current, GSG structure, coplanar electrodes and pitch size is 250um.Applications:It can be used in 400G SR4 and 800G SR4. 2023-03-14
7 P/N:GTEMPD230V1 InGaAs Edge-Coupled PD Chip InGaAs Edge-Coupled PD ChipProduct Features:The side detection window 180×60μm, P/N bond pad on top, high Responsivity, low dark current.Applications:It can be used in Side coupling, laser power monitoring and optical power meter. 2023-03-14
8 P/N:GTFLMPD100V1 InGaAs 100 μm Flip MPD InGaAs 100 μm Flip MPDProduct Features:The active diameter is 100μm, featuring high reponsivity, low dark current and bottom-illuminated structure.Applications:It can be used in back facet laser power monitoring, optical power meter, etc. 2023-03-14
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