Detector Chip Series-GT Photonics Co., Ltd.

Sensor Chip Series

Detector Chip Series

TO Product Series

Silicon Photonic Integration Series

P/N:GTBAPDA12V1

InGaAs Bottom-illuminated 25G APD Chip(Φ12 μm)
Product Features:
The active diameter is 12μm, with an integrated lens on the back, featuring high multiplication, low capacitance, low temperature coefficient, GS structure, opposite electrodes.
Applications:
It can be used in 25G PON, 5G Wireless and 100G ER4.
P/N:GTAPD36V1

InGaAs 10G APD (∅36 μm)
Product Features:
The active diameter is 36μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.
Applications:
It can be used in 10G PON(XGS OLT/10G EPON OLT)Class C+.
P/N:GT10GCSAPD50V2_D

InGaAs 10G APD (∅50 μm)
Product Features:
The active area is round with diameter of 50μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.
Applications:
It can be used in 10G PON ONU.
P/N:GTAPD50V1

InGaAs 2.5G APD(∅50 μm)
Product Features:
The active diameter is 50μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.
Applications:
It can be used in GPON ONU and 2.5G optical modules.
P/N:GTBPD12V1

InGaAs 200Gbps PIN PD Chip(∅12um)
Product Features:
The active diameter is 12μm, with an integrated lens on the back, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes.
Applications:
It can be used in 800G and 1.6T Ethernet.
P/N:GTBPD12V1_750_1×4

lnGaAs 4x200Gbps PIN PD Array(pitch=750um) (∅12um)
Product Features:
The active diameter is 12μm, with an integrated lens on the back, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and pitch size is 750um.
Applications:
It can be used in 800G and 1.6T Ethernet.
P/N:GTPD20V1

InGaAs 56Gbps PIN PD Chip (∅20um)
Product Features:
The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure and coplanar electrodes.
Applications:
It can be used in Data Center, 200G LR4 and 400G LR4.
P/N:GTPD20AV1_250_1×4

InGaAs 4x56Gbps PIN PD Array(pitch=250um) (∅20um)
Product Features:
The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and pitch size is 250um.
Applications:
It can be used in Data Center, 200G LR4 and 400G LR4.