| 序号 | P/N | 产品名称 | 产品简介 | 发布时间 |
|---|---|---|---|---|
| 1 | P/N:GTPD1000V1 | 2.2 μm Long Wavelength ∅1000 μm PD | 2.2 μm Long Wavelength ∅1000 μm PDProduct Features:The active diameter is 1000μm with round shape,featuring high reponsivity, low dark current, gold-coated ground surface at the bottom side of chip and typically high responsivity at the wavelength of 2000nm and 2200nm.Applications:It can be used in gas analysis, thermometer and hygrometer. | 2023-03-14 |
| 2 | P/N:GTAPD16V1 | InGaAs Top-illuminated 25G APD Chip(∅16 μm) | InGaAs Top-illuminated 25G APD Chip(Φ16 μm)Product features:The active diameter is 16um, featuring high multiplication, low dark current, GS structure and opposite electrodes.Applications:It can be used in 5G Wireless, 100G ER4 and 25G PON. | 2023-03-14 |