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Silicon Photonic Integration Series

InGaAs 10G APD (∅36 μm)

InGaAs 10G APD (∅36 μm).jpg


产品特点：

该产品光敏面直径为36μm，上下电极结构；具有高响应度、低暗电流等特点。

应用范围：

10G PON(XGS OLT/10G EPON OLT) Class C+

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