850nm/910nm InGaAs PD Array (100Gbps PAM4)

850nm910nm InGaAs PD Array (100Gbps PAM4).jpg


Product Features:

The active diameter is 32μm, featuring high reponsivity(850nm/910nm/1310nm), low dark current, GSG structure, coplanar electrodes and pitch size is 250um.

Applications:

It can be used in 400G SR4 and 800G SR4.