InGaAs Bottom-illuminated 25G APD Chip(∅12 μm)

InGaAs Bottom-illuminated 50G APD Chip(Φ12 μm).jpg


InGaAs Bottom-illuminated 50G APD Chip(Φ12 μm)-1.jpg


Product Features:

The active diameter is 12μm, with an integrated lens on the back, featuring high multiplication, low capacitance, low temperature coefficient, GS structure, opposite electrodes.

Applications:

It can be used in 25G PON, 5G Wireless and 100G ER4.