Sensor Chip Series
Detector Chip Series
TO Product Series
Silicon Photonic Integration Series

InGaAs Bottom-illuminated 50G APD Chip(∅12 μm)

InGaAs Bottom-illuminated 50G APD Chip(Φ12 μm).jpg


InGaAs Bottom-illuminated 50G APD Chip(Φ12 μm)-1.jpg


产品特点：

该产品光敏面直径为12um，P/N电极位于异侧，GS结构；具有高倍增、低暗电流等特点。

应用范围：

50G PON、100G ER4

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