InGaAs 10G APD (∅36 μm)

InGaAs 10G APD (∅36 μm).jpg


Product Features:

The active diameter is 36μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.

Applications:

It can be used in 10G PON(XGS OLT/10G EPON OLT)Class C+.