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Silicon Photonic Integration Series

InGaAs Bottom-illuminated 25G APD Chip(∅12 μm)

InGaAs Bottom-illuminated 50G APD Chip(Φ12 μm).jpg


InGaAs Bottom-illuminated 50G APD Chip(Φ12 μm)-1.jpg


Product Features:

The active diameter is 12μm, featuring high multiplication, low dark current, GS structure and opposite electrodes.

Applications:

It can be used in 25G PON、100G ER4.

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